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Breakthrough in Optoelectronic Memory Technology Paves Way for Advanced Computing

Breakthrough in Optoelectronic Memory Technology Paves Way for Advanced Computing

Researchers at Dongguk University in Korea have unveiled a groundbreaking development in memory technology with their latest creation: a next-generation optoelectronic memory device that leverages tellurene. This novel device aims to overcome the limitations of traditional floating-gate nonvolatile memory technologies which are integral to systems like the Internet of Things and next-generation flash memory.

Conventional memory devices, while improving rapidly, still face significant challenges including scalability and power efficiency. Optoelectronic memory devices (OEMs) using two-dimensional (2D) van der Waals heterostructures (vdWhs) offer a promising alternative due to their unique ability to convert light into electricity and vice versa. However, until now, these have grappled with issues like limited durability and narrow operational spectrums.

The research team, led by Professor Hyunsik Im from the Division of Physics and Semiconductor Science, innovated by using a combination of rhenium disulfide, hexagonal boron nitride, and 2D tellurene. Published in the ACS Nano journal on February 6, 2024, their study details how this new device not only demonstrates superior long-term stability and data retention but also shows an impressive on/off switching ratio of 10^6.

Key to their success is the broad absorption spectrum of the device, ranging from the visible to near-infrared at room temperature. This allows the device to handle multi-bit storage states, which can be controlled by varying the gate voltage, laser wavelength, and power, thereby enabling it to store complex data patterns effectively.

Moreover, this OEM is capable of executing fundamental Boolean logic gate operations, such as OR and AND, by integrating electrical and optical inputs. This feature is crucial for digital circuits and could significantly enhance the functionality of future AI systems, cloud computing, and broadband optical programmability.

Professor Im expressed enthusiasm about the implications of their research, stating, “Our research marks a significant milestone in multi-bit optoelectronic memory technology and holds great potential in various applications including artificial intelligence systems and cloud computing.”

This breakthrough represents a significant advancement in memory technology, promising to impact a wide range of high-tech applications and setting the stage for the next wave of computing innovation.

Journal: ACS Nano

DOI: https://doi.org/10.1021/acsnano.3c08567

About Dongguk University

Dongguk University, founded in 1906, is located in Seoul, South Korea. It comprises 13 colleges that cover a variety of disciplines and has local campuses in Gyeongju, Goyang, and Los Angeles. The university has 1300 professors who conduct independent research and 18000 students undertaking studies in a variety of disciplines. Interaction between disciplines is one of the strengths on which Dongguk prides itself; the university encourages researchers to work across disciplines in Information Technology, Bio Technology, CT, and Buddhism.

Website: http://www.dongguk.edu/mbs/en/index.jsp

Breakthrough in Optoelectronic Memory Technology Paves Way for Advanced Computing